June 1, 2015
PhD Student Heng Wu wins Best Student Paper Award for 2014 VLSI Symposium
The VLSI Symposium is one of the two most competitive conferences in the electronic device field. His paper is titled "Ge CMOS Technology: Breakthroughs of nFETs (Imax=714 mA/mm, gmax=590mS/mm) by recessed channel and S/D". He is advised by Professor Peide Ye.